CY7C1061GE30-10BVXI Infineon Technologies
Hersteller: Infineon TechnologiesSRAM Chip Async Single 2.5V/3.3V 16M-bit 1M x 16 10ns 48-Pin VFBGA Tray
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Technische Details CY7C1061GE30-10BVXI Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA, Packaging: Tray, Package / Case: 48-VFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.2V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-VFBGA (6x8), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote CY7C1061GE30-10BVXI
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| CY7C1061GE30-10BVXI | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC Anzahl je Verpackung: 2400 Stücke |
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CY7C1061GE30-10BVXI | Hersteller : Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1061GE30-10BVXI | Hersteller : Cypress Semiconductor |
SRAM 16Mb Fast SRAM With ECC |
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CY7C1061GE30-10BVXI | Hersteller : Infineon Technologies |
SRAM 16Mb Fast SRAM With ECC |
Produkt ist nicht verfügbar |
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| CY7C1061GE30-10BVXI | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |