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CY7C1170KV18-550BZC

CY7C1170KV18-550BZC Cypress Semiconductor Corp

Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign= Hersteller: Cypress Semiconductor Corp
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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Technische Details CY7C1170KV18-550BZC Cypress Semiconductor Corp

Description: IC SRAM 18MBIT PAR 165FBGA, Packaging: Bulk, Package / Case: 165-LBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SRAM - Synchronous, DDR II+, Clock Frequency: 550 MHz, Memory Format: SRAM, Supplier Device Package: 165-FBGA (13x15), Memory Interface: Parallel, Memory Organization: 512K x 36, DigiKey Programmable: Not Verified.

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CY7C1170KV18-550BZC CY7C1170KV18-550BZC Hersteller : Cypress Semiconductor CYPRS10466_1-2540483.pdf SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
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