CY7C1399B-12VXC Cypress Semiconductor
Hersteller: Cypress SemiconductorСтатична пам'ять SRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Кбіт; Орг. пам. = 32К х 8; Тдост/Частота = 12 нс; Тексп, °С = 0...+70; SOJ-28
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Technische Details CY7C1399B-12VXC Cypress Semiconductor
Description: IC SRAM 256KBIT PARALLEL 28SOJ, Packaging: Tube, Package / Case: 28-BSOJ (0.300", 7.62mm Width), Mounting Type: Surface Mount, Memory Size: 256Kbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-SOJ, Write Cycle Time - Word, Page: 12ns, Memory Interface: Parallel, Access Time: 12 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote CY7C1399B-12VXC
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CY7C1399B-12VXC | Hersteller : Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 28SOJ Packaging: Tube Package / Case: 28-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOJ Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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