Technische Details CY7S1041G30-10ZSXI Cypress Semiconductor
Description: IC SRAM 4MBIT PARALLEL 44TSOP II, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 256K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Supplier Device Package: 44-TSOP II, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.2V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount.
Weitere Produktangebote CY7S1041G30-10ZSXI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
CY7S1041G30-10ZSXI | Hersteller : Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackage / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
|
|
CY7S1041G30-10ZSXI | Hersteller : Infineon Technologies |
SRAM CMOS RAM W ECC 4-Mbit |
Produkt ist nicht verfügbar |

