D1131SH65TXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 6.5KV 1100A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Operating Temperature - Junction: 0°C ~ 140°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 6500 V
Description: DIODE GEN PURP 6.5KV 1100A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Operating Temperature - Junction: 0°C ~ 140°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 6500 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2357.29 EUR |
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Technische Details D1131SH65TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 6.5KV 1100A, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1100A, Operating Temperature - Junction: 0°C ~ 140°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 6500 V, Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A, Current - Reverse Leakage @ Vr: 150 mA @ 6500 V.
Weitere Produktangebote D1131SH65TXPSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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D1131SH65TXPSA1 | Hersteller : Infineon Technologies | Rectifier Diode |
Produkt ist nicht verfügbar |
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D1131SH65TXPSA1 | Hersteller : Infineon Technologies | Rectifier Diode |
Produkt ist nicht verfügbar |