D1461S45TXPSA1 Infineon Technologies
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Technische Details D1461S45TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 1720A D10026K-1, Packaging: Tray, Package / Case: DO-200, Variant, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1720A, Supplier Device Package: BG-D10026K-1, Operating Temperature - Junction: -40°C ~ 140°C, Current - Reverse Leakage @ Vr: 200 mA @ 4500 V.
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D1461S45TXPSA1 | Hersteller : Infineon Technologies |
 Description: DIODE GEN PURP 1720A D10026K-1Packaging: Tray Package / Case: DO-200, Variant Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1720A Supplier Device Package: BG-D10026K-1 Operating Temperature - Junction: -40°C ~ 140°C Current - Reverse Leakage @ Vr: 200 mA @ 4500 V |
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