D18V0H1U2LP-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: GENERAL PROTECTION PP X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 58pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: GENERAL PROTECTION PP X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 58pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.058 EUR |
30000+ | 0.057 EUR |
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Produktbewertung abgeben
Technische Details D18V0H1U2LP-7B Diodes Incorporated
Description: GENERAL PROTECTION PP X1-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 58pF @ 1MHz, Current - Peak Pulse (10/1000µs): 11A (8/20µs), Voltage - Reverse Standoff (Typ): 18V (Max), Supplier Device Package: X1-DFN1006-2, Unidirectional Channels: 1, Voltage - Breakdown (Min): 20V, Voltage - Clamping (Max) @ Ipp: 32V, Power - Peak Pulse: 350W, Power Line Protection: No.
Weitere Produktangebote D18V0H1U2LP-7B nach Preis ab 0.04 EUR bis 0.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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D18V0H1U2LP-7B | Hersteller : DIODES INC. |
Description: DIODES INC. - D18V0H1U2LP-7B - ESD-Schutzbaustein, 32 V, X1-DFN1006, 2 Pin(s), 18 V, 250 mW tariffCode: 85411000 Bauform - Diode: X1-DFN1006 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 250mW euEccn: NLR Begrenzungsspannung Vc, max.: 32V Betriebsspannung: 18V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 9976 Stücke: Lieferzeit 14-21 Tag (e) |
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D18V0H1U2LP-7B | Hersteller : DIODES INC. |
Description: DIODES INC. - D18V0H1U2LP-7B - ESD-Schutzbaustein, 32 V, X1-DFN1006, 2 Pin(s), 18 V, 250 mW tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 9976 Stücke: Lieferzeit 14-21 Tag (e) |
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D18V0H1U2LP-7B | Hersteller : Diodes Zetex | 18V Uni-Directional TVs Diode |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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D18V0H1U2LP-7B | Hersteller : DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 350W; 20÷24V; 11A; unidirectional; X1-DFN1006-2; Ch: 1 Mounting: SMD Case: X1-DFN1006-2 Breakdown voltage: 20...24V Max. forward impulse current: 11A Semiconductor structure: unidirectional Max. off-state voltage: 18V Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.35kW Leakage current: 1µA Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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D18V0H1U2LP-7B | Hersteller : Diodes Zetex | 18V Uni-Directional TVs Diode |
Produkt ist nicht verfügbar |
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D18V0H1U2LP-7B | Hersteller : Diodes Incorporated | ESD Suppressors / TVS Diodes General Protection PP X1-DFN1006-2 T&R 10K |
Produkt ist nicht verfügbar |
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D18V0H1U2LP-7B | Hersteller : DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 350W; 20÷24V; 11A; unidirectional; X1-DFN1006-2; Ch: 1 Mounting: SMD Case: X1-DFN1006-2 Breakdown voltage: 20...24V Max. forward impulse current: 11A Semiconductor structure: unidirectional Max. off-state voltage: 18V Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.35kW Leakage current: 1µA |
Produkt ist nicht verfügbar |