D1961SH45TXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 2380A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2380A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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Technische Details D1961SH45TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 4.5KV 2380A, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 2380A, Operating Temperature - Junction: 0°C ~ 140°C, Voltage - DC Reverse (Vr) (Max): 4500 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A, Current - Reverse Leakage @ Vr: 150 mA @ 4500 V.