D2601N90TXPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 9KV 3040A
Current - Reverse Leakage @ Vr: 100 mA @ 9000 V
Voltage - DC Reverse (Vr) (Max): 9000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 3040A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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Technische Details D2601N90TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 9KV 3040A, Current - Reverse Leakage @ Vr: 100 mA @ 9000 V, Voltage - DC Reverse (Vr) (Max): 9000 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 160°C, Current - Average Rectified (Io): 3040A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: DO-200AE, Packaging: Tray.