Technische Details D2601N90TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 9KV 3040A, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3040A, Operating Temperature - Junction: -40°C ~ 160°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 9000 V, Current - Reverse Leakage @ Vr: 100 mA @ 9000 V.
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D2601N90TXPSA1 | Hersteller : Infineon Technologies |
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D2601N90TXPSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3040A Operating Temperature - Junction: -40°C ~ 160°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 9000 V Current - Reverse Leakage @ Vr: 100 mA @ 9000 V |
Produkt ist nicht verfügbar |