D2SB80H Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
17+ | 1.07 EUR |
100+ | 0.70 EUR |
500+ | 0.55 EUR |
1200+ | 0.48 EUR |
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Technische Details D2SB80H Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL, Packaging: Tube, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Grade: Automotive, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Qualification: AEC-Q101.
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D2SB80H | Hersteller : Taiwan Semiconductor |
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