D44H8

Hersteller: STMicroelectronics
Trans GP BJT NPN 60V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans GP BJT NPN 60V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ONSEMI
Description: ONSEMI - D44H8 - TRANSISTOR, NPN, 8A 60V TO-220
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 10A
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 50MHz
Betriebstemperatur, max.: 150°C
SVHC: Boric acid (14-Jun-2023)

Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220
Mounting: THT
Kind of package: tube

Hersteller: STMicroelectronics
Bipolar Transistors - BJT Gen Low Voltage PWR 60V Vceo 10A Ic

Hersteller: STMicroelectronics
Description: TRANS NPN 60V 10A TO220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 10A 2000mW 3-Pin(3+Tab) TO-220 Tube