D5810N06TVFXPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 601.23 EUR |
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Technische Details D5810N06TVFXPSA1 Infineon Technologies
Description: DIODE GEN PURP 600V 5800A, Packaging: Bulk, Package / Case: DO-200AC, K-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 5800A, Operating Temperature - Junction: -40°C ~ 180°C, Voltage - DC Reverse (Vr) (Max): 600 V, Current - Reverse Leakage @ Vr: 100 mA @ 600 V.
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D5810N06TVFXPSA1 | Hersteller : Infineon Technologies |
Rectifier Diode |
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D5810N06TVFXPSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 600V 5800A Packaging: Tray Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5800A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 mA @ 600 V |
Produkt ist nicht verfügbar |