D950N18TXPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 1.8KV 950A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 194.2 EUR |
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Technische Details D950N18TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 950A, Packaging: Bulk, Package / Case: DO-200AA, A-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 950A, Operating Temperature - Junction: -40°C ~ 180°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A, Current - Reverse Leakage @ Vr: 40 mA @ 1800 V.
Weitere Produktangebote D950N18TXPSA1 nach Preis ab 186.04 EUR bis 200.97 EUR
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D950N18TXPSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 1.8KV 950A Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 950A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A Current - Reverse Leakage @ Vr: 40 mA @ 1800 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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