D950N18TXPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 1.8KV 950A
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 196.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details D950N18TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 950A, Packaging: Tray, Package / Case: DO-200AA, A-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 950A, Operating Temperature - Junction: -40°C ~ 180°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A, Current - Reverse Leakage @ Vr: 40 mA @ 1800 V.