| Anzahl | Privatkunde |
|---|---|
| 1+ | 90 EUR |
| 10+ | 76.74 EUR |
| 100+ | 66.91 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details DAA200X1800NA IXYS
Category: Diode modules, Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A, Max. off-state voltage: 1.8kV, Load current: 100A x2, Semiconductor structure: double independent, Case: SOT227B, Max. forward voltage: 1.21V, Max. load current: 200A, Max. forward impulse current: 1.5kA, Features of semiconductor devices: avalanche breakdown effect, Kind of package: tube, Type of semiconductor module: diode, Mechanical mounting: screw, Electrical mounting: screw.
Weitere Produktangebote DAA200X1800NA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DAA200X1800NA | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A Max. off-state voltage: 1.8kV Load current: 100A x2 Semiconductor structure: double independent Case: SOT227B Max. forward voltage: 1.21V Max. load current: 200A Max. forward impulse current: 1.5kA Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DAA200X1800NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)