DB105-G Comchip Technology
auf Bestellung 6650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 0.51 EUR |
| 1650+ | 0.45 EUR |
| 3300+ | 0.40 EUR |
| 4950+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DB105-G Comchip Technology
Description: BRIDGE RECT 1PHASE 600V 1A DB, Packaging: Tube, Package / Case: 4-EDIP (0.321", 8.15mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DB, Part Status: Obsolete, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 600.
Weitere Produktangebote DB105-G nach Preis ab 0.49 EUR bis 1.41 EUR
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DB105-G | Hersteller : Comchip Technology |
 Bridge Rectifiers VR=600V, IO=1A |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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DB105-G | Hersteller : Comchip Technology |
Description: BRIDGE RECT 1PHASE 600V 1A DB Packaging: Tube Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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| DB105G | Hersteller : GI |
DIP-4 |
auf Bestellung 149 Stücke: Lieferzeit 21-28 Tag (e) |
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| DB105G | Hersteller : GeneSiC Semiconductor |
Diode Rectifier Bridge Single 600V 1A 4-Pin Case DB |
Produkt ist nicht verfügbar |
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| DB105G | Hersteller : GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1A DB Packaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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DB105G | Hersteller : GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A600P/420 |
Produkt ist nicht verfügbar |