DCP55-16-13

DCP55-16-13 Diodes Incorporated


diodes inc._ds30707-1164095.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 1W 60V
auf Bestellung 464 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.55 EUR
100+0.39 EUR
500+0.32 EUR
Mindestbestellmenge: 5
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Technische Details DCP55-16-13 Diodes Incorporated

Description: TRANS NPN 60V 1A SOT223-3, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: SOT-223-3, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote DCP55-16-13

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DCP55-16-13 DCP55-16-13 Diodes Incorporated DCP55_-16.pdf Description: TRANS NPN 60V 1A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DCP55-16-13 onsemi DCP55_-16.pdf Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DCP55-16-13 DCP55_-16.pdf
DCP55-16-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DCP55-16-13 DCP55_-16.pdf
Hersteller: onsemi
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH