Technische Details DD1200S12H4HOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1200000 W.
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DD1200S12H4HOSA1 | Hersteller : Infineon Technologies |
 Rectifier Diode |
Produkt ist nicht verfügbar |
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DD1200S12H4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1200V 1200A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1200000 W |
Produkt ist nicht verfügbar |