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DD1200S33K2CNOSA1

DD1200S33K2CNOSA1 Infineon Technologies

DD1200S33K2C.pdf Hersteller: Infineon Technologies
Description: DIODE MODULE GP 3300V 1200A
Packaging: Tray
Package / Case: Block, 4 Lead
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
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Technische Details DD1200S33K2CNOSA1 Infineon Technologies

Description: DIODE MODULE GP 3300V 1200A, Packaging: Tray, Package / Case: Block, 4 Lead, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1200A (DC), Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A, Current - Reverse Leakage @ Vr: 1700 A @ 1800 V.