DD600S16K4NOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE MODULE GP 600V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 600A (DC)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 600 A
Current - Reverse Leakage @ Vr: 4 mA @ 1600 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1163.1 EUR |
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Technische Details DD600S16K4NOSA1 Infineon Technologies
Description: DIODE MODULE GP 600V 600A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 600A (DC), Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 600 A, Current - Reverse Leakage @ Vr: 4 mA @ 1600 V.