DD600S65K3NOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 6500V AIHV130-6
Current - Reverse Leakage @ Vr: 900 A @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 6500 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 125°C
Supplier Device Package: A-IHV130-6
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details DD600S65K3NOSA1 Infineon Technologies
Description: DIODE MODULE GP 6500V AIHV130-6, Current - Reverse Leakage @ Vr: 900 A @ 3600 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 600 A, Voltage - DC Reverse (Vr) (Max): 6500 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 125°C, Supplier Device Package: A-IHV130-6, Diode Configuration: 2 Independent, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.