Technische Details DDB2U20N12W1RFB11BPSA1 Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Diode Type: Single Phase, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide Schottky, Supplier Device Package: AG-EASY1B-1, Part Status: Active, Voltage - Peak Reverse (Max): 1.2 kV, Current - Average Rectified (Io): 20 A, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 58 µA @ 1200 V.
Weitere Produktangebote DDB2U20N12W1RFB11BPSA1 nach Preis ab 108.16 EUR bis 121 EUR
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DDB2U20N12W1RFB11BPSA1 | Infineon Technologies |
 Description: LOW POWER EASY AG-EASY1B-2311Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 58 µA @ 1200 V |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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DDB2U20N12W1RFB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 58 µA @ 1200 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 108.16 EUR |
| DDB2U20N12W1RFB11BPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 121 EUR |