DDB2U40N12W1RFB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
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Technische Details DDB2U40N12W1RFB11BPSA1 Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Diode Type: Single Phase, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide Schottky, Supplier Device Package: AG-EASY1B-1, Part Status: Active, Voltage - Peak Reverse (Max): 1.2 kV, Current - Average Rectified (Io): 40 A, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A, Current - Reverse Leakage @ Vr: 116 µA @ 1200 V.
Weitere Produktangebote DDB2U40N12W1RFB11BPSA1 nach Preis ab 112.02 EUR bis 136.03 EUR
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DDB2U40N12W1RFB11BPSA1 | Infineon Technologies |
Diode Modules 1200 V, 40 A EasyBRIDGE diode module |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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DDB2U40N12W1RFB11BPSA1 | Infineon Technologies |
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A Current - Reverse Leakage @ Vr: 116 µA @ 1200 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| DDB2U40N12W1RFB11BPSA1 |
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Hersteller: Infineon Technologies
Diode Modules 1200 V, 40 A EasyBRIDGE diode module
Diode Modules 1200 V, 40 A EasyBRIDGE diode module
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 133.58 EUR |
| 10+ | 128.39 EUR |
| 120+ | 112.02 EUR |
| DDB2U40N12W1RFB11BPSA1 |
|
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 136.03 EUR |