DDB2U60N12W3RFC39BPSA1 Infineon Technologies

Description: IGBT MODULE 950V 135A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 135 A, Voltage - Collector Emitter Breakdown (Max): 950 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 7.9 µA, Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V.