Produkte > INFINEON TECHNOLOGIES > DDB6U205N16LHOSA1

DDB6U205N16LHOSA1 Infineon Technologies


Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+333.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DDB6U205N16LHOSA1 Infineon Technologies

Description: DIODE MODULE GP 1600V, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Technology: Standard, Diode Configuration: 3 Independent, Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A, Current - Reverse Leakage @ Vr: 10 mA @ 1600 V.