DDB6U85N16LHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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Technische Details DDB6U85N16LHOSA1 Infineon Technologies
Description: DIODE MODULE GP 1600V AGISOPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 3 Independent, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: AG-ISOPACK-1, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A, Current - Reverse Leakage @ Vr: 5 mA @ 1600 V.
Weitere Produktangebote DDB6U85N16LHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DDB6U85N16LHOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1600V AGISOPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: AG-ISOPACK-1 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DDB6U85N16LHOSA1 | Infineon Technologies |
Discrete Semiconductor Modules LOW POWER ECONO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DDB6U85N16LHOSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDB6U85N16LHOSA1 |
|
Hersteller: Infineon Technologies
Discrete Semiconductor Modules LOW POWER ECONO
Discrete Semiconductor Modules LOW POWER ECONO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH