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DDTA123JCA-7-F

DDTA123JCA-7-F Diodes Incorporated

ds30334.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
6000+0.065 EUR
9000+0.062 EUR
15000+0.057 EUR
21000+0.055 EUR
30000+0.052 EUR
Mindestbestellmenge: 3000 Stücke
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Lieferzeit: 10-14 Tag (e)
Mindestmenge: 3000 Stücke
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Technische Details DDTA123JCA-7-F Diodes Incorporated

Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote DDTA123JCA-7-F nach Preis ab 0.048 EUR bis 0.43 EUR

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DDTA123JCA-7-F DDTA123JCA-7-F Diodes Incorporated ds30334.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 77549 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JCA-7-F DDTA123JCA-7-F Diodes Incorporated ds30334.pdf Digital Transistors 200MW 2.2K 47K
auf Bestellung 17825 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.43 EUR
12+0.3 EUR
100+0.12 EUR
1000+0.086 EUR
3000+0.065 EUR
9000+0.055 EUR
24000+0.048 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 77549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Hersteller: Diodes Incorporated
Digital Transistors 200MW 2.2K 47K
auf Bestellung 17825 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+0.43 EUR
12+0.3 EUR
100+0.12 EUR
1000+0.086 EUR
3000+0.065 EUR
9000+0.055 EUR
24000+0.048 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH