Technische Details DDTA143FCA-7-F Diodes Zetex
Description: TRANS PREBIAS PNP 200MW SOT23-3, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DDTA143FCA-7-F nach Preis ab 0.052 EUR bis 0.75 EUR
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DDTA143FCA-7-F | Diodes Incorporated |
 Bipolar Transistors - Pre-Biased 200MW 4.7K 22K |
auf Bestellung 6859 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA143FCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount |
auf Bestellung 76851 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA143FCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT23-3 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DDTA143FCA-7-F |
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Hersteller: Diodes Incorporated
Bipolar Transistors - Pre-Biased 200MW 4.7K 22K
Bipolar Transistors - Pre-Biased 200MW 4.7K 22K
auf Bestellung 6859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.51 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.099 EUR |
| 3000+ | 0.071 EUR |
| 9000+ | 0.055 EUR |
| 24000+ | 0.052 EUR |
| DDTA143FCA-7-F |
|
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Description: TRANS PREBIAS PNP 200MW SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 76851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 39+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| DDTA143FCA-7-F |
|
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 200MW SOT23-3
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)