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DDTB123YC-7-F

DDTB123YC-7-F Diodes Zetex

ddtb_xxxx_c.pdf
Hersteller: Diodes Zetex
Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SOT-23 T/R
auf Bestellung 819000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6000+0.04 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDTB123YC-7-F Diodes Zetex

Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote DDTB123YC-7-F nach Preis ab 0.044 EUR bis 0.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DDTB123YC-7-F DDTB123YC-7-F Diodes Incorporated DDTB_XXXX_C.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2505000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.081 EUR
6000+0.073 EUR
9000+0.068 EUR
15000+0.063 EUR
21000+0.06 EUR
30000+0.057 EUR
75000+0.051 EUR
150000+0.048 EUR
300000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTB123YC-7-F DDTB123YC-7-F Diodes Incorporated DDTB_XXXX_C.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2506953 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
87+0.24 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTB123YC-7-F DDTB123YC-7-F Diodes Incorporated DDTB_XXXX_C.pdf Digital Transistors 200MW 2.2K 10K
auf Bestellung 4448 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
3000+0.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTB123YC-7-F DDTB_XXXX_C.pdf
DDTB123YC-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2505000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.081 EUR
6000+0.073 EUR
9000+0.068 EUR
15000+0.063 EUR
21000+0.06 EUR
30000+0.057 EUR
75000+0.051 EUR
150000+0.048 EUR
300000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTB123YC-7-F DDTB_XXXX_C.pdf
DDTB123YC-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2506953 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTB123YC-7-F DDTB_XXXX_C.pdf
DDTB123YC-7-F
Hersteller: Diodes Incorporated
Digital Transistors 200MW 2.2K 10K
auf Bestellung 4448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
3000+0.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH