DDTB142JU-7-F Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 470 Ohms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
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Technische Details DDTB142JU-7-F Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 470 Ohms, Resistor - Emitter Base (R2): 10 kOhms.
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DDTB142JU-7-F | Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 0.47K 10K |
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| DDTB142JU-7-F |
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Hersteller: Diodes Incorporated
Bipolar Transistors - Pre-Biased 200MW 0.47K 10K
Bipolar Transistors - Pre-Biased 200MW 0.47K 10K
auf Bestellung 2148 Stücke:
Lieferzeit 10-14 Tag (e)