DDTC114ELP-7 Diodes Zetex
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DDTC114ELP-7 Diodes Zetex
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DDTC114ELP-7 nach Preis ab 0.13 EUR bis 0.77 EUR
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DDTC114ELP-7 | Hersteller : Diodes Zetex |
 Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC114ELP-7 | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114ELP-7 | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114ELP-7 | Hersteller : Diodes Incorporated |
Digital Transistors 250mW Single (R1/R2) |
auf Bestellung 525 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114ELP-7 | Hersteller : Diodes Zetex |
Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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DDTC114ELP-7 | Hersteller : Diodes Inc |
Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| DDTC114ELP-7 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 10...100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DDTC114ELP-7 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 10...100 |
Produkt ist nicht verfügbar |