Technische Details DDTC114ELP-7 Diodes Zetex
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: X1-DFN1006-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DDTC114ELP-7 nach Preis ab 0.15 EUR bis 1.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DDTC114ELP-7 | Diodes Zetex |
Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC114ELP-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: X1-DFN1006-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114ELP-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNCurrent - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: X1-DFN1006-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
auf Bestellung 213000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114ELP-7 | Diodes Incorporated |
Digital Transistors 250mW Single (R1/R2) |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| DDTC114ELP-7 |
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Hersteller: Diodes Zetex
Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R
Trans Digital BJT NPN 50V 50mA 250mW 3-Pin DFN T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| DDTC114ELP-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| DDTC114ELP-7 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| DDTC114ELP-7 |
![]() |
Hersteller: Diodes Incorporated
Digital Transistors 250mW Single (R1/R2)
Digital Transistors 250mW Single (R1/R2)
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.25 EUR |



