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DDTC123JE-7-F

DDTC123JE-7-F Diodes Incorporated

ds30314.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
auf Bestellung 285000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.095 EUR
6000+0.088 EUR
9000+0.073 EUR
30000+0.071 EUR
75000+0.064 EUR
150000+0.056 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDTC123JE-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT523, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-523.

Weitere Produktangebote DDTC123JE-7-F nach Preis ab 0.081 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DDTC123JE-7-F DDTC123JE-7-F Diodes Incorporated ds30314.pdf Digital Transistors PRE-BIAS NPN 150mW
auf Bestellung 8373 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.51 EUR
10+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.11 EUR
3000+0.092 EUR
6000+0.081 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC123JE-7-F DDTC123JE-7-F Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 285000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC123JE-7-F ds30314.pdf
DDTC123JE-7-F
Hersteller: Diodes Incorporated
Digital Transistors PRE-BIAS NPN 150mW
auf Bestellung 8373 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.51 EUR
10+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.11 EUR
3000+0.092 EUR
6000+0.081 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC123JE-7-F ds30314.pdf
DDTC123JE-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 285000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH