Produkte > DIODES INCORPORATED > DDTC143ECA-7-F
DDTC143ECA-7-F

DDTC143ECA-7-F DIODES INCORPORATED

ds30329.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
989+0.072 EUR
1276+0.056 EUR
1421+0.05 EUR
3000+0.041 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DDTC143ECA-7-F DIODES INCORPORATED

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote DDTC143ECA-7-F nach Preis ab 0.06 EUR bis 0.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DDTC143ECA-7-F DDTC143ECA-7-F Hersteller : Diodes Incorporated ds30329.pdf Digital Transistors PRE-BIAS NPN 200mW
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.084 EUR
1000+0.074 EUR
3000+0.06 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DDTC143ECA-7-F DDTC143ECA-7-F Hersteller : Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.19 EUR
147+0.12 EUR
500+0.088 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
DDTC143ECA-7-F Hersteller : DIODES/ZETEX ds30329.pdf NPN 50V 100mA 250MHz 200mW DDTC143ECA-7-F Diodes TDDTC143eca
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
500+0.071 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
DDTC143ECA-7-F DDTC143ECA-7-F Hersteller : Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH