DDTD113EU-7-F Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details DDTD113EU-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323, Resistor - Emitter Base (R2): 1 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-323, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
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Preis |
|---|---|---|---|---|---|
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DDTD113EU-7-F | Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 1K1K |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DDTD113EU-7-F |
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Hersteller: Diodes Incorporated
Bipolar Transistors - Pre-Biased 200MW 1K1K
Bipolar Transistors - Pre-Biased 200MW 1K1K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

