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DDTD113ZU-7-F

DDTD113ZU-7-F Diodes Incorporated

DDTD_XXXX_U.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.093 EUR
6000+0.086 EUR
9000+0.071 EUR
30000+0.07 EUR
75000+0.063 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDTD113ZU-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT323, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-323, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).

Weitere Produktangebote DDTD113ZU-7-F nach Preis ab 0.076 EUR bis 0.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DDTD113ZU-7-F DDTD113ZU-7-F Diodes Incorporated DDTD_XXXX_U.pdf Digital Transistors 200MW 1K 10K
auf Bestellung 4166 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.43 EUR
11+0.26 EUR
100+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
3000+0.092 EUR
6000+0.076 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTD113ZU-7-F DDTD113ZU-7-F Diodes Incorporated DDTD_XXXX_U.pdf Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 82164 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
47+0.38 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTD113ZU-7-F DDTD_XXXX_U.pdf
DDTD113ZU-7-F
Hersteller: Diodes Incorporated
Digital Transistors 200MW 1K 10K
auf Bestellung 4166 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+0.43 EUR
11+0.26 EUR
100+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
3000+0.092 EUR
6000+0.076 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTD113ZU-7-F DDTD_XXXX_U.pdf
DDTD113ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 82164 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
47+0.38 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH