Technische Details DF100R07W1H5FPB54BPSA2 Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 40 µA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.
Weitere Produktangebote DF100R07W1H5FPB54BPSA2 nach Preis ab 49.6 EUR bis 123.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies |
 Module with TRENCH STOP and CoolSiC diode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies |
Description: IGBT MODULE 650V 40A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies |
IGBT Modules 650 V, 100 A booster IGBT module |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies |
Description: IGBT MODULE 650V 40A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF100R07W1H5FPB54BPSA2 | INFINEON |
Description: INFINEON - DF100R07W1H5FPB54BPSA2 - IGBT-Modul, Zweifach [Halbbrücke], 50 A, 1.35 V, 150 °C, Module IGBT-Technologie: Trench Stop 5 H5/ CoolSiC Sperrschichttemperatur Tj, max.: 150 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35 Verlustleistung Pd: - Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 650 Produktpalette: EasyPACK TRENCHSTOP IGBT-Konfiguration: Zweifach [Halbbrücke] DC-Kollektorstrom: 50 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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| DF100R07W1H5FPB54BPSA2 |
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Hersteller: Infineon Technologies
Module with TRENCH STOP and CoolSiC diode
Module with TRENCH STOP and CoolSiC diode
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 54.36 EUR |
| DF100R07W1H5FPB54BPSA2 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 55.62 EUR |
| DF100R07W1H5FPB54BPSA2 |
|
Hersteller: Infineon Technologies
IGBT Modules 650 V, 100 A booster IGBT module
IGBT Modules 650 V, 100 A booster IGBT module
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 68.12 EUR |
| 10+ | 52.17 EUR |
| 120+ | 49.6 EUR |
| DF100R07W1H5FPB54BPSA2 |
|
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MODULE 650V 40A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 78.85 EUR |
| DF100R07W1H5FPB54BPSA2 |
|
Hersteller: INFINEON
Description: INFINEON - DF100R07W1H5FPB54BPSA2 - IGBT-Modul, Zweifach [Halbbrücke], 50 A, 1.35 V, 150 °C, Module
IGBT-Technologie: Trench Stop 5 H5/ CoolSiC
Sperrschichttemperatur Tj, max.: 150
IGBT-Anschluss: Einpressmontage
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35
Verlustleistung Pd: -
Bauform - Transistor: Module
Kollektor-Emitter-Spannung V(br)ceo: 650
Produktpalette: EasyPACK TRENCHSTOP
IGBT-Konfiguration: Zweifach [Halbbrücke]
DC-Kollektorstrom: 50
SVHC: No SVHC (08-Jul-2021)
Description: INFINEON - DF100R07W1H5FPB54BPSA2 - IGBT-Modul, Zweifach [Halbbrücke], 50 A, 1.35 V, 150 °C, Module
IGBT-Technologie: Trench Stop 5 H5/ CoolSiC
Sperrschichttemperatur Tj, max.: 150
IGBT-Anschluss: Einpressmontage
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35
Verlustleistung Pd: -
Bauform - Transistor: Module
Kollektor-Emitter-Spannung V(br)ceo: 650
Produktpalette: EasyPACK TRENCHSTOP
IGBT-Konfiguration: Zweifach [Halbbrücke]
DC-Kollektorstrom: 50
SVHC: No SVHC (08-Jul-2021)
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 123.25 EUR |
| 5+ | 100.15 EUR |
| 10+ | 76.6 EUR |