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DF10G6M4N,LF

DF10G6M4N,LF Toshiba Semiconductor and Storage

DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Tape & Reel (TR)
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Mindestbestellmenge: 3000 Stücke
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Technische Details DF10G6M4N,LF Toshiba Semiconductor and Storage

Description: TVS DIODE 5.5VWM 25VC 10DFN, Power Line Protection: No, Power - Peak Pulse: 30W, Voltage - Clamping (Max) @ Ipp: 25V, Voltage - Breakdown (Min): 5.6V, Bidirectional Channels: 4, Supplier Device Package: 10-DFN (2.5x1), Voltage - Reverse Standoff (Typ): 5.5V (Max), Current - Peak Pulse (10/1000µs): 2A (8/20µs), Capacitance @ Frequency: 0.2pF @ 1MHz, Applications: General Purpose, Type: Zener, Mounting Type: Surface Mount, Package / Case: 10-UFDFN, Packaging: Tape & Reel (TR).

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DF10G6M4N,LF DF10G6M4N,LF Toshiba Semiconductor and Storage DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF DF10G6M4N,LF Toshiba 87F7E72009EFB4A725E4B920A05F94C1A09C210A6E190C19077A17A842DC9679.pdf ESD Protection Diodes / TVS Diodes ESD Protection Diode
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N
DF10G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF 87F7E72009EFB4A725E4B920A05F94C1A09C210A6E190C19077A17A842DC9679.pdf
DF10G6M4N,LF
Hersteller: Toshiba
ESD Protection Diodes / TVS Diodes ESD Protection Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH