Technische Details DF10G6M4N,LF Toshiba
Description: TVS DIODE 5.5VWM 25VC 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-UFDFN, Mounting Type: Surface Mount, Type: Zener, Applications: General Purpose, Capacitance @ Frequency: 0.2pF @ 1MHz, Current - Peak Pulse (10/1000µs): 2A (8/20µs), Voltage - Reverse Standoff (Typ): 5.5V (Max), Supplier Device Package: 10-DFN (2.5x1), Bidirectional Channels: 4, Voltage - Breakdown (Min): 5.6V, Voltage - Clamping (Max) @ Ipp: 25V, Power - Peak Pulse: 30W, Power Line Protection: No.
Weitere Produktangebote DF10G6M4N,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| DF10G6M4N,LF | Hersteller : Toshiba |
 ESD Suppressor Diode TVS Uni-Dir 5.5V 10-Pin DFN T/R |
Produkt ist nicht verfügbar |
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DF10G6M4N,LF | Hersteller : Toshiba |
ESD Suppressor TVS Uni-Dir 5.5V 10-Pin DFN T/R |
Produkt ist nicht verfügbar |
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DF10G6M4N,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF10G6M4N,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC 10DFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |