DF16MR12W1M1HFB67BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A
Part Status: Active
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Packaging: Tray
Produktrezensionen
Produktbewertung abgeben
Technische Details DF16MR12W1M1HFB67BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A, Part Status: Active, Vgs(th) (Max) @ Id: 5.15V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V, Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 25A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Packaging: Tray.
Weitere Produktangebote DF16MR12W1M1HFB67BPSA1 nach Preis ab 77 EUR bis 92.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DF16MR12W1M1HFB67BPSA1 | Infineon Technologies |
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DF16MR12W1M1HFB67BPSA1 |
|
Hersteller: Infineon Technologies
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 92.4 EUR |
| 10+ | 84.23 EUR |
| 120+ | 77 EUR |