Technische Details DF16MR12W1M1HFB67BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A, Part Status: Active, Vgs(th) (Max) @ Id: 5.15V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V, Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 25A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Packaging: Tray.
Weitere Produktangebote DF16MR12W1M1HFB67BPSA1 nach Preis ab 42.28 EUR bis 109.96 EUR
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DF16MR12W1M1HFB67BPSA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 25A 17-Pin Tray |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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DF16MR12W1M1HFB67BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 25A Part Status: Active Vgs(th) (Max) @ Id: 5.15V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V Current - Continuous Drain (Id) @ 25°C: 25A Drain to Source Voltage (Vdss): 1200V (1.2kV) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Packaging: Tray |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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DF16MR12W1M1HFB67BPSA1 | Infineon Technologies |
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF16MR12W1M1HFB67BPSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 25A 17-Pin Tray
Trans MOSFET N-CH SiC 1.2KV 25A 17-Pin Tray
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 99.41 EUR |
| 4+ | 42.28 EUR |
| DF16MR12W1M1HFB67BPSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A
Part Status: Active
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Packaging: Tray
Description: MOSFET 2N-CH 1200V 25A
Part Status: Active
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 105.87 EUR |
| 24+ | 102.29 EUR |
| DF16MR12W1M1HFB67BPSA1 |
|
Hersteller: Infineon Technologies
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 109.96 EUR |
| 10+ | 100.23 EUR |
| 120+ | 91.63 EUR |