DF2B7ACT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TVS DIODE 5.5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.04 EUR |
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Technische Details DF2B7ACT,L3F Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC CST2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Capacitance @ Frequency: 8.5pF @ 1MHz, Current - Peak Pulse (10/1000µs): 4A (8/20µs), Voltage - Reverse Standoff (Typ): 5.5V (Max), Supplier Device Package: CST2, Bidirectional Channels: 1, Voltage - Breakdown (Min): 5.8V, Voltage - Clamping (Max) @ Ipp: 20V, Power - Peak Pulse: 80W, Power Line Protection: No.
Weitere Produktangebote DF2B7ACT,L3F nach Preis ab 0.05 EUR bis 0.37 EUR
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DF2B7ACT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
auf Bestellung 24304 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B7ACT,L3F | Hersteller : Toshiba |
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auf Bestellung 89194 Stücke: Lieferzeit 10-14 Tag (e) |
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