
DF2B7AFU,H3F Toshiba Semiconductor and Storage

Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.04 EUR |
6000+ | 0.03 EUR |
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Technische Details DF2B7AFU,H3F Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 8.5pF @ 1MHz, Current - Peak Pulse (10/1000µs): 4A (8/20µs), Voltage - Reverse Standoff (Typ): 5.5V (Max), Supplier Device Package: USC, Bidirectional Channels: 1, Voltage - Breakdown (Min): 5.8V, Voltage - Clamping (Max) @ Ipp: 20V, Power - Peak Pulse: 80W, Power Line Protection: No.
Weitere Produktangebote DF2B7AFU,H3F nach Preis ab 0.04 EUR bis 0.20 EUR
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DF2B7AFU,H3F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
auf Bestellung 6809 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2B7AFU,H3F | Hersteller : Toshiba |
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auf Bestellung 20312 Stücke: Lieferzeit 10-14 Tag (e) |
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