DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.9V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 1600W (1.6kW)
Power Line Protection: No
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 270pF @ 1MHz, Current - Peak Pulse (10/1000µs): 50A (8/20µs), Voltage - Reverse Standoff (Typ): 12.6V (Max), Supplier Device Package: USC, Unidirectional Channels: 1, Voltage - Breakdown (Min): 12.9V, Voltage - Clamping (Max) @ Ipp: 32V, Power - Peak Pulse: 1600W (1.6kW), Power Line Protection: No, Part Status: Active.
Weitere Produktangebote DF2S14P2FU,H3F nach Preis ab 0.15 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DF2S14P2FU,H3F | Toshiba |
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn |
auf Bestellung 5243 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S14P2FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12.6VWM 32VC USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 270pF @ 1MHz Current - Peak Pulse (10/1000µs): 50A (8/20µs) Voltage - Reverse Standoff (Typ): 12.6V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.9V Voltage - Clamping (Max) @ Ipp: 32V Power - Peak Pulse: 1600W (1.6kW) Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DF2S14P2FU,H3F |
|
Hersteller: Toshiba
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
auf Bestellung 5243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.67 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| DF2S14P2FU,H3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.9V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 1600W (1.6kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.6VWM 32VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.9V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 1600W (1.6kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |