DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
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Technische Details DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC, Unidirectional Channels: 1, Supplier Device Package: USC, Voltage - Reverse Standoff (Typ): 12.6V (Max), Current - Peak Pulse (10/1000µs): 50A (8/20µs), Capacitance @ Frequency: 270pF @ 1MHz, Applications: General Purpose, Operating Temperature: 150°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: SC-76, SOD-323, Packaging: Tape & Reel (TR), Part Status: Active, Power Line Protection: No, Power - Peak Pulse: 1600W (1.6kW), Voltage - Clamping (Max) @ Ipp: 32V, Voltage - Breakdown (Min): 12.9V.
Weitere Produktangebote DF2S14P2FU,H3F nach Preis ab 0.15 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DF2S14P2FU,H3F | Toshiba |
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn |
auf Bestellung 5243 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S14P2FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12.6VWM 32VC USCPart Status: Active Power Line Protection: No Power - Peak Pulse: 1600W (1.6kW) Voltage - Clamping (Max) @ Ipp: 32V Voltage - Breakdown (Min): 12.9V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 12.6V (Max) Current - Peak Pulse (10/1000µs): 50A (8/20µs) Capacitance @ Frequency: 270pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DF2S14P2FU,H3F |
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Hersteller: Toshiba
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
auf Bestellung 5243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.67 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| DF2S14P2FU,H3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 12.6VWM 32VC USC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |


