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DF400R12KE3HOSA1

DF400R12KE3HOSA1 Infineon Technologies

Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details DF400R12KE3HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 580A 2000W, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 2000 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 580 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, Operating Temperature: -40°C ~ 125°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.

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DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon_DF400R12KE3_DS_v03_00_EN-3361354.pdf IGBT Modules MEDIUM POWER 62MM
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
DF400R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF400R12KE3HOSA1 Infineon_DF400R12KE3_DS_v03_00_EN-3361354.pdf
DF400R12KE3HOSA1
Hersteller: Infineon Technologies
IGBT Modules MEDIUM POWER 62MM
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH