DF400R12KE3HOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 215.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DF400R12KE3HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.
Weitere Produktangebote DF400R12KE3HOSA1 nach Preis ab 260.45 EUR bis 298.40 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DF400R12KE3HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 580A 2000W 5-Pin 62MM-1 Tray |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
DF400R12KE3HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 580A 2000W 5-Pin 62MM-1 Tray |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
DF400R12KE3HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 580A 2000000mW Automotive 5-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
|||||||||
 |
DF400R12KE3HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 2kW Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
DF400R12KE3HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
 |
DF400R12KE3HOSA1 | Hersteller : Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
Produkt ist nicht verfügbar |
|||||||||
|
|
DF400R12KE3HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 2kW Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A |
Produkt ist nicht verfügbar |