DF5G5M4N,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TVS DIODE 3.6VWM 15VC 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
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Technische Details DF5G5M4N,LF Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 5DFN, Packaging: Tape & Reel (TR), Package / Case: 5-XFDFN, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 0.2pF @ 1MHz, Current - Peak Pulse (10/1000µs): 2A (8/20µs), Voltage - Reverse Standoff (Typ): 3.6V (Max), Supplier Device Package: 5-DFN (1.3x0.8), Unidirectional Channels: 5, Voltage - Breakdown (Min): 4V, Voltage - Clamping (Max) @ Ipp: 15V, Power - Peak Pulse: 30W, Power Line Protection: No.
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DF5G5M4N,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC 5DFN Packaging: Cut Tape (CT) Package / Case: 5-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: 5-DFN (1.3x0.8) Unidirectional Channels: 5 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |