DF650R17IE4BOSA1 Infineon Technologies

Description: IGBT MOD 1700V 930A 4150W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 930 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 4150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.