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DF650R17IE4BOSA1

DF650R17IE4BOSA1 Infineon Technologies

Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 930 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details DF650R17IE4BOSA1 Infineon Technologies

Description: IGBT MOD 1700V 930A 4150W, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 4150 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 930 A, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, Operating Temperature: -40°C ~ 150°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.

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DF650R17IE4BOSA1 DF650R17IE4BOSA1 Infineon Technologies Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF650R17IE4BOSA1 Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc
DF650R17IE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH