DF6D7M1N,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: 6-DFN (1.25x1)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details DF6D7M1N,LF Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN, Part Status: Active, Power Line Protection: No, Voltage - Clamping (Max) @ Ipp: 12V (Typ), Voltage - Breakdown (Min): 6V, Bidirectional Channels: 2, Supplier Device Package: 6-DFN (1.25x1), Voltage - Reverse Standoff (Typ): 5V (Max), Current - Peak Pulse (10/1000µs): 1A (8/20µs), Capacitance @ Frequency: 0.3pF @ 1MHz, Applications: General Purpose, Type: Zener, Mounting Type: Surface Mount, Package / Case: 6-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DF6D7M1N,LF nach Preis ab 0.17 EUR bis 0.56 EUR
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DF6D7M1N,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 12VC 6DFNVoltage - Clamping (Max) @ Ipp: 12V (Typ) Voltage - Breakdown (Min): 6V Bidirectional Channels: 2 Supplier Device Package: 6-DFN (1.25x1) Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 0.3pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF6D7M1N,LF | Hersteller : Toshiba |
ESD Suppressors / TVS Diodes ESD 0.3pF 0.5uA 6V VBR 1mA Diode |
Produkt ist nicht verfügbar |
