DF75R12W1H4FB11BOMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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Technische Details DF75R12W1H4FB11BOMA2 Infineon Technologies
Description: IGBT MOD 1200V 25A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.

