DF900R12IP4DVBOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 866.2 EUR |
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Technische Details DF900R12IP4DVBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 5100 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.
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DF900R12IP4DVBOSA1 | Hersteller : Infineon Technologies |
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DF900R12IP4DVBOSA1 | Hersteller : Infineon Technologies |
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DF900R12IP4DVBOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
Produkt ist nicht verfügbar |