
DG2032EDN-T1-GE4 Vishay Siliconix

Description: IC SWITCH SPDT X 2 3.1OHM 12QFN
Packaging: Cut Tape (CT)
Package / Case: 12-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3.1Ohm
-3db Bandwidth: 221MHz
Supplier Device Package: 12-QFN (3x3)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -19.4pC
Crosstalk: -62dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10mOhm
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Part Status: Active
Number of Circuits: 2
auf Bestellung 2328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 2.29 EUR |
11+ | 1.66 EUR |
25+ | 1.51 EUR |
100+ | 1.34 EUR |
250+ | 1.26 EUR |
500+ | 1.21 EUR |
1000+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DG2032EDN-T1-GE4 Vishay Siliconix
Description: IC SWITCH SPDT X 2 3.1OHM 12QFN, Packaging: Tape & Reel (TR), Package / Case: 12-VFQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 3.1Ohm, -3db Bandwidth: 221MHz, Supplier Device Package: 12-QFN (3x3), Voltage - Supply, Single (V+): 1.8V ~ 5.5V, Charge Injection: -19.4pC, Crosstalk: -62dB @ 1MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 10mOhm, Switch Time (Ton, Toff) (Max): 40ns, 33ns, Part Status: Active, Number of Circuits: 2.
Weitere Produktangebote DG2032EDN-T1-GE4 nach Preis ab 1.11 EUR bis 2.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DG2032EDN-T1-GE4 | Hersteller : Vishay / Siliconix |
![]() |
auf Bestellung 2821 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
DG2032EDN-T1-GE4 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 3.1Ohm -3db Bandwidth: 221MHz Supplier Device Package: 12-QFN (3x3) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: -19.4pC Crosstalk: -62dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10mOhm Switch Time (Ton, Toff) (Max): 40ns, 33ns Part Status: Active Number of Circuits: 2 |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||
DG2032EDN-T1-GE4 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |