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DGD2117S8-13

DGD2117S8-13 Diodes Incorporated

DGD2117-2118.pdf
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.6 EUR
5000+1.54 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DGD2117S8-13 Diodes Incorporated

Description: IC GATE DRVR HIGH-SIDE 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 75ns, 35ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 6V, 9.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, DigiKey Programmable: Not Verified.

Weitere Produktangebote DGD2117S8-13 nach Preis ab 1.64 EUR bis 4.58 EUR

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DGD2117S8-13 DGD2117S8-13 Diodes Incorporated DGD2117-2118.pdf Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 212475 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
10+3.13 EUR
25+2.95 EUR
100+2.52 EUR
250+2.36 EUR
500+2.07 EUR
1000+1.71 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DGD2117S8-13 DGD2117S8-13 Diodes Incorporated DGD2117-2118.pdf Gate Drivers HV Gate Driver
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.58 EUR
10+2.97 EUR
25+2.75 EUR
100+2.34 EUR
250+2.22 EUR
500+1.94 EUR
1000+1.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DGD2117S8-13 DGD2117-2118.pdf
DGD2117S8-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 212475 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.5 EUR
10+3.13 EUR
25+2.95 EUR
100+2.52 EUR
250+2.36 EUR
500+2.07 EUR
1000+1.71 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DGD2117S8-13 DGD2117-2118.pdf
DGD2117S8-13
Hersteller: Diodes Incorporated
Gate Drivers HV Gate Driver
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.58 EUR
10+2.97 EUR
25+2.75 EUR
100+2.34 EUR
250+2.22 EUR
500+1.94 EUR
1000+1.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH