DGTD120T40S1PT Diodes Incorporated
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 16.26 EUR |
10+ | 14.71 EUR |
25+ | 14.03 EUR |
100+ | 12.18 EUR |
450+ | 10.6 EUR |
900+ | 9.35 EUR |
2700+ | 9.24 EUR |
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Technische Details DGTD120T40S1PT Diodes Incorporated
Description: IGBT 1200V-X TO247 TUBE 0.45K, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 65ns/308ns, Switching Energy: 1.96mJ (on), 540µJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 341 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 357 W.
Weitere Produktangebote DGTD120T40S1PT
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DGTD120T40S1PT | Hersteller : Diodes Inc | Trans IGBT Chip N-CH 1200V 80A 357000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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DGTD120T40S1PT | Hersteller : Diodes Incorporated |
Description: IGBT 1200V-X TO247 TUBE 0.45K Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 IGBT Type: Field Stop Td (on/off) @ 25°C: 65ns/308ns Switching Energy: 1.96mJ (on), 540µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 341 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 357 W |
Produkt ist nicht verfügbar |