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DI005N03PW-AQ

DI005N03PW-AQ Diotec Semiconductor

di005n03pw.pdf Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 30V 0.02OHM
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 3680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 31
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Technische Details DI005N03PW-AQ Diotec Semiconductor

Description: MOSFET POWERQFN 2X2 30V 0.02OHM, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V.

Weitere Produktangebote DI005N03PW-AQ nach Preis ab 0.22 EUR bis 1 EUR

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DI005N03PW-AQ DI005N03PW-AQ Hersteller : Diotec Semiconductor di005n03pw.pdf MOSFETs MOSFET, PowerQFN 2x2, 30V, 5A, 150C, N, AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1 EUR
10+0.7 EUR
100+0.49 EUR
500+0.43 EUR
1000+0.4 EUR
4000+0.29 EUR
8000+0.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DI005N03PW-AQ DI005N03PW-AQ Hersteller : Diotec Semiconductor di005n03pw.pdf Description: MOSFET POWERQFN 2X2 30V 0.02OHM
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH